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| INTEGRATED CIRCUITS DATA SHEET TEA1098A Speech and handsfree IC Product specification Supersedes data of 2000 Jun 08 File under Integrated Circuits, IC03 2000 Aug 18 Philips Semiconductors Product specification Speech and handsfree IC FEATURES Line interface * Low DC line voltage * Voltage regulator with adjustable DC voltage * Symmetrical high impedance inputs (70 k) for dynamic, magnetic or electret microphones * DTMF input with confidence tone on earphone and/or loudspeaker * Earphone amplifier for dynamic, magnetic or piezo-electric earpieces (with externally adjustable gain) * Digital volume control on earphone amplifier (4 steps) * Automatic Gain Control (AGC) for true line loss compensation * Microphone mute * Key tone mode. Supplies * Provides a strong 3.35 V regulated supply for microcontroller or dialler * Provides filtered power supply, optimized according to line current * Filtered 2.0 V power supply output for electret microphone * PD logic input for power-down. Handsfree * Asymmetrical high input impedance for electret microphone * Loudspeaker amplifier with single-ended rail-to-rail output and externally adjustable gain ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1098ATV TEA1098AUH VSO40 - bare die; on foil DESCRIPTION plastic very small outline package; 40 leads GENERAL DESCRIPTION TEA1098A * Dynamic limiter on loudspeaker amplifier to prevent distortion * Digital volume control on loudspeaker amplifier (8 steps) * Duplex controller consisting of: - Signal and noise envelope monitors for both channels (with adjustable sensitivities and timing) - Decision logic (with adjustable switch-over and Idle mode timing) - Voice switch control (with adjustable switching range and constant sum of gain during switching). APPLICATIONS * Line powered telephone sets. The TEA1098A is an analog bipolar circuit dedicated for telephony applications. It includes a line interface, handset (HS) microphone and earpiece amplifiers, handsfree (HF) microphone and loudspeaker amplifiers and a duplex controller with signal and noise monitors on both channels. Digital volume control is available both on earphone and loudspeaker amplifiers. This IC provides a 3.35 V strong supply for a microcontroller and a 2.0 V filtered voltage supply for an electret microphone. VERSION SOT158-1 - 2000 Aug 18 2 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A QUICK REFERENCE DATA Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 C for TEA1098ATV; Tj = 25 C for TEA1098AUH; AGC pin connected to LN; PD = HIGH; HFC = LOW; MUTE = HIGH; BPC = HIGH; measured according to test circuits; unless otherwise specified. SYMBOL Iline VSLPE VBB VDD PARAMETER line current operating range stabilized voltage between SLPE and GND regulated supply voltage for internal circuitry regulated supply voltage on pin VDD current available on pin VBB in speech mode in handsfree mode IBB(PD) current consumption on PD = LOW pin VBB during power-down phase voltage gain from pin MIC+/MIC- to LN voltage gain from pin IR (referenced to LN) to RECO VMIC = 5 mV (RMS) VIR = 15 mV (RMS); HFC = HIGH - - - 11 9 460 - - - mA mA A CONDITIONS normal operation with reduced performance Iline = 15 mA Iline = 70 mA Iline = 15 mA Iline = 70 mA VBB > 3.35 V + 0.25 V (typ.) otherwise IBB 11 1 3.4 5.7 2.75 4.9 3.1 - MIN. - - 3.7 6.1 3.0 5.3 3.35 TYP. 11 4.0 6.5 3.25 5.7 3.6 MAX. 130 UNIT mA mA V V V V V V VBB - 0.25 - Gv(MIC-LN) Gv(IR-RECO) 43.3 28.7 44.3 29.7 45.3 30.7 dB dB Gv(RECO-EARO) gain voltage range between pins RECO and EARO Gv(TXI-TXO) Gv(HFTX-LN) Gv(HFRX-LSAO) voltage gain from pin TXI to TXO voltage gain from pin HFTX to LN voltage gain from pin HFRX to LSAO switching range switching range adjustment gain control range for transmit and receive amplifiers affected by the AGC; with respect to Iline = 15 mA with RSWR referenced to 365 k Iline = 70 mA VTXI = 3 mV (RMS); RGATX = 30.1 k VHFTX = 15 mV (RMS) VHFRX = 30 mV (RMS); RGALS = 255 k; Iline = 70 mA -3 - +15 dB 12.7 33.5 25.5 15.2 34.7 28 17.7 35.9 30.5 dB dB dB SWR SWR Gv(trx) - -40 5.45 40 - 6.45 - +12 7.45 dB dB dB 2000 Aug 18 3 Philips Semiconductors Product specification Speech and handsfree IC BLOCK DIAGRAM TEA1098A handbook, full pagewidth REG 20 SLPE 18 14 VBB LN 19 STARTER R1 23 VDD LINE CURRENT DETECTION LOW VOLTAGE BEHAVIOUR SWITCH SUPPLY MANAGEMENT 24 MICS AGC 22 AGC POWER-DOWN CURRENT SOURCES 1 PD GND 17 tail currents for preamps 40 HFC HFTX 39 TEA1098A DTMF 35 MIC+ 34 MIC- 33 ATTENUATOR LOGIC INPUTS DECODING 2 MUTE 3 BPC 30 GATX 29 TXO TXI 31 32 GNDTX 27 SWT TSEN 9 TENV 8 TNOI 7 RNOI 10 RENV 12 RSEN 11 VOLUME CONTROL GALS 15 LSAO 16 4 EVCI 5 LVCI TX AND RX ENVELOPE AND NOISE DETECTORS BUFFERS AND COMPARATORS 25 STAB DUCO LOGIC SWT STATUS VOICE SWITCH 26 SWR 28 IDT 6 HFRX DLC 13 DYNAMIC LIMITER 21 IR RECO 38 GARX 37 EARO 36 ATTENUATOR FCA140 Fig.1 Block diagram. 2000 Aug 18 4 Philips Semiconductors Product specification Speech and handsfree IC PINNING PIN SYMBOL TEA1098ATV TEA1098AUH PD MUTE BPC EVCI LVCI HFRX TNOI TENV TSEN RNOI RSEN RENV DLC VBB GALS LSAO n.c. GND SLPE LN REG IR AGC VDD MICS STAB SWR n.c. SWT IDT TXO GATX TXI GNDTX MIC- MIC+ DTMF EARO 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 - 17 18 19 20 21 22 23 24 25 26 - 27 28 29 30 31 32 33 34 35 36 40 41 42 43 44 1 2 3 4 5 6 7 8 9 10 11 12 13 14 and 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 and 31 32 33 34 35 power-down input (active LOW) logic input (active LOW) logic input (active LOW) PAD DESCRIPTION TEA1098A logic input for digital volume control (earpiece and loudspeaker LSB) logic input for digital volume control (loudspeaker MSB) receive input for loudspeaker amplifier transmit noise envelope timing adjustment transmit signal envelope timing adjustment transmit signal envelope sensitivity adjustment receive noise envelope timing adjustment receive signal envelope sensitivity adjustment receive signal envelope timing adjustment dynamic limiter capacitor for the loudspeaker amplifier stabilized supply for internal circuitry loudspeaker amplifier gain adjustment loudspeaker amplifier output not connected ground reference line current sense positive line terminal line voltage regulator decoupling receive amplifier input automatic gain control/line loss compensation 3.35 V regulated voltage supply for microcontrollers microphone supply reference current adjustment switching range adjustment not connected switch-over timing adjustment Idle mode timing adjustment handsfree microphone amplifier output handsfree microphone amplifier gain adjustment handsfree microphone amplifier input ground reference for microphone amplifiers negative handset microphone amplifier input positive handset microphone amplifier input dual tone multi-frequency input earpiece amplifier output 2000 Aug 18 5 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A PIN SYMBOL PAD DESCRIPTION TEA1098ATV TEA1098AUH GARX RECO HFTX HFC 37 38 39 40 36 37 38 39 earpiece amplifier gain adjustment receive amplifier output transmit input for line amplifier logic input handbook, halfpage PD 1 MUTE 2 BPC 3 EVCI 4 LVCI 5 HFRX 6 TNOI 7 TENV 8 TSEN 9 RNOI 10 40 HFC 39 HFTX 38 RECO 37 GARX 36 EARO 35 DTMF 34 MIC+ 33 MIC- 32 GNDTX 31 TXI TEA1098ATV RSEN 11 RENV 12 DLC 13 VBB 14 GALS 15 LSAO 16 GND 17 SLPE 18 LN 19 REG 20 FCA141 30 GATX 29 TXO 28 IDT 27 SWT 26 SWR 25 STAB 24 MICS 23 VDD 22 AGC 21 IR Fig.2 Pin configuration. 2000 Aug 18 6 Philips Semiconductors Product specification Speech and handsfree IC FUNCTIONAL DESCRIPTION All data given in this chapter are typical values, except when otherwise specified. Supplies LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB) The supply for the TEA1098A and its peripherals is obtained from the line. The IC generates a stabilized reference voltage (Vref) between pins SLPE and GND. This reference voltage is equal to 3.7 V for line currents lower than 18 mA. It than increases linearly with the line current and reaches the value of 6.1 V for line currents higher than 45 mA. For line currents below 9 mA, the internal reference voltage generating Vref is automatically adjusted to a lower value. This is the so-called low voltage area and the TEA1098A has limited performances in this area (see Section "Low voltage behaviour"). This reference voltage is temperature compensated. The voltage between pins SLPE and REG is used by the internal regulator to generate the stabilized reference TEA1098A voltage and is decoupled by means of a capacitor between pins LN and REG. This capacitor converted into an equivalent inductance realizes the set impedance conversion from its DC value (RSLPE) to its AC value (done by an external impedance). The IC regulates the line voltage at pin LN and can be calculated as follows: V LN = V ref + R SLPE x I SLPE I SLPE = I line - I where: Iline = line current Ix = current consumed on pin LN (approximately a few A) ISLPE = current flowing through the RSLPE resistor The preferred value for RSLPE is 20 . Changing this value will affect more than the DC characteristics; it also influences the transmit gains to the line, the gain control characteristic, the sidetone level and the maximum output swing on the line. x LN handbook, full pagewidth RSLPE 20 SLPE CREG 4.7 F E1 D1 J1 R3 REG R1 TR1 TR2 GND VBB E2 TP1 D1 TN2 R2 from preamp TN1 GND GND J2 MGM298 Fig.3 Line interface principle. 2000 Aug 18 7 Philips Semiconductors Product specification Speech and handsfree IC As can be seen from Fig.3, the internal circuitry is supplied by pin VBB, which is a strong supply point combined with the line interface. The line current is flowing through the RSLPE resistor and is sunk by the VBB voltage stabilizer, thus becoming available for a loudspeaker amplifier or any peripheral IC. Its voltage is equal to 3.0 V for line currents lower than 18 mA. It than increases linearly with the line current and reaches the value of 5.3 V for line currents greater than 45 mA. It is temperature compensated. The aim of the current switch TR1 and TR2 is to reduce distortion of large AC line signals. Current ISLPE is supplied TEA1098A to VBB via TR1 when the voltage on SLPE is greater than VBB + 0.25 V. When the voltage on SLPE is lower than this value, the current ISLPE is shunted to GND via TR2. The reference voltage Vref can be increased by connecting an external resistor between pins REG and SLPE. For large line currents, this increase can slightly affect some dynamic performances such as maximum signal level on the line for 2% THD. The voltage on pin VBB is not affected by this external resistor; see Fig.4 for the main DC voltages. handbook, full pagewidth 8 FCA049 LN voltages (V) SLPE 6 VBB 4 VDD 2 MICS 0 0 0.01 0.02 0.03 0.04 0.05 0.06 Iline (A) 0.07 Fig.4 Main DC voltages. VDD SUPPLY FOR MICROCONTROLLER (PIN VDD) The voltage on the VDD supply point follows the voltage on VBB with a difference typically equal to 250 mV and is internally limited to 3.35 V. This voltage is temperature compensated. This supply point can provide a current up to 3 mA typically. Its internal consumption stays low (a few 10 nA) as long as VDD does not exceed 1.5 V. VDD can also be used as an input; in this case the voltage will be stabilised to 3.35 V up to 75 mA input current. VBB and VDD can supply external circuits in the limit of currents provided from the line, taking into account the internal current consumption. 2000 Aug 18 8 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A handbook, full pagewidth 100.0u MGL438 IDD (A) 10.0u 1.0u 100.0n 10.0n 1.0n 100.0p 10.0p 1.0 1.5 2.0 2.5 VDD (V) 3.0 Fig.5 Current consumption on VDD. SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX) The MICS output can be used as a supply for an electret microphone. Its voltage is equal to 2.0 V; it can source a current up to 1 mA and has an output impedance equal to 200 . LOW VOLTAGE BEHAVIOUR For line currents below 9 mA, the reference voltage is automatically adjusted to a lower value; the VBB voltage follows the SLPE voltage with 250 mV difference. The excess current available for other purposes than DC biasing of the IC becomes small. In this low voltage area, the IC has limited performances. When the VBB voltage becomes lower than 2.7 V, the VBB detector of the receive dynamic limiter on pin LSAO acts continuously, discharging the capacitor connected to pin DLC. In the DC condition, the loudspeaker is then automatically disabled below this voltage. When VBB goes below 2.5 V, the TEA1098A is forced into a low voltage mode whatever the levels on the logic inputs are. It is a speech mode with reduced performances only enabling the microphone channel (between the MIC inputs and LN) and the earpiece amplifier. These two channels are able to deliver signals for line currents as small as 3 mA. The HFC input is tied to GND sinking a current typically equal to 300 A. POWER-DOWN MODE (PIN PD) To reduce consumption during dialling or register recall (flash), the TEA1098A is provided with a power-down input (PD). When the voltage on pin PD is LOW, the current consumption from VBB and VDD is reduced to 460 A typically. Therefore a capacitor of 470 F on VBB is sufficient to power the TEA1098A during pulse dialling or flash. The PD input has a pull-up structure. In this mode, the capacitor CREG is internally disconnected. 2000 Aug 18 9 Philips Semiconductors Product specification Speech and handsfree IC Transmit channels (pins MIC+, MIC-, DTMF, HFTX and LN) HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC- AND LN) The TEA1098A has symmetrical microphone inputs. The input impedance between pins MIC+ and MIC- is typically 70 k. The voltage gain between pins MIC+/MIC- and LN is set to 44.3 dB. Without limitation from the output, the microphone input stage can accommodate signals up to 18 mV (RMS) at room temperature for 2% of Total Harmonic Distortion (THD). The microphone inputs are biased at one diode voltage. Automatic gain control is provided for line loss compensation. DTMF AMPLIFIER (PINS DTMF, LN AND RECO) The TEA1098A has an asymmetrical DTMF input. The input impedance between pins DTMF and GND is typically 20 k. The voltage gain between pins DTMF and LN is set to 25.35 dB. Without limitation from the output, the input stage can accommodate signals up to 180 mV (RMS) at room temperature for 2% of THD. When the DTMF amplifier is enabled, dialling tones may be sent on the line. These tones can be heard in the earpiece or in the loudspeaker at a low level. This is called the confidence tone. The voltage attenuation between pins DTMF and RECO is typically -16.5 dB in handsfree mode (HFC HIGH), and -28.2 dB in handset mode (HFC LOW). The DC biasing of this input is 0 V. The automatic gain control has no effect on these channels. HANDSFREE TRANSMIT AMPLIFIER TEA1098A Receive channels (pins IR, RECO, GARX, EARO and EVCI) RX AMPLIFIER (PINS IR, RECO AND EVCI) The receive amplifier has one input IR which is referred to the line. The input impedance between pins IR and LN is typically 20 k and the DC biasing between these pins is equal to one diode voltage. When HFC = 0, the gain between pins IR (referred to LN) and RECO is typically 17.2 dB which compensates typically 15 dB lower than attenuation of the anti-sidetone network. The receive amplifier gain can be digitally increased with the 4-level logic input EVCI, providing 4 steps of 4.85 dB which apply in all handset receive modes. A proportional voltage decoder at pin EVCI (see Fig.17) defines a gain of 17.2 dB when EVCI = 0 (minimum gain) and 31.7 dB (maximum gain) when EVCI = VDD; intermediate steps correspond to EVCI = 13VDD and EVCI = 23VDD levels. Without limitation from the output, the input stage can accommodate signals up to 50 mV (RMS) at room temperature for 2% of THD. When HFC = 1, the gain is set automatically to 29.7 dB which compensate the anti-sidetone network attenuation minus 2.3 dB. This receive amplifier has a rail-to-rail output RECO, which is designed for use with high ohmic (real) loads (larger than 5 k). This output is biased at two diodes voltage. Automatic gain control is provided for line loss compensation. EARPIECE AMPLIFIER (PINS GARX AND EARO) The earpiece amplifier is an operational amplifier having its output (EARO) and its inverting input (GARX) available. Its input signal comes, via a decoupling capacitor, from the receive output RECO. It is used in combination with two resistors to get the required gain or attenuation compared to the receive gain. The typical resistor ratio is 4, which gives a 12 dB gain. The gain range can be chosen between 0 dB and 20 dB. Two external capacitors CGAR (connected between pins GAR and EARO) and CGARS (connected between pins GAR and GND) ensure stability. The CGAR capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAR x RE2. The relationship CGARS 10 x CGAR must be fulfilled. (PINS HFTX AND LN) The TEA1098A has an asymmetrical HFTX input, which is mainly intended for use in combination with the TXO output. The input impedance between pins HFTX and GND is typically 20 k. The voltage gain between pins HFTX and LN is set to 34.7 dB. Without limitation from the output, the input stage can accommodate signals up to 95 mV (RMS) at room temperature for 2% of THD. The HFTX input is biased at two diodes voltage. Automatic gain control is provided for line loss compensation. 2000 Aug 18 10 Philips Semiconductors Product specification Speech and handsfree IC The earpiece amplifier has a rail-to-rail output EARO, biased at two diodes voltage. It is designed for use with low ohmic (real) loads (150 ) or capacitive loads (100 nF in series with 100 ). AGC (pin AGC) The TEA1098A performs automatic line loss compensation, which fits well with the true line attenuation. The automatic gain control varies the gain of some transmit and receive amplifiers in accordance with the DC line current. The control range is 6.45 dB for Gv(MIC-LN) and Gv(IR-RECO) and 6.8 dB for Gv(HFTX-LN), which corresponds approximately to a line length of 5.5 km for a 0.5 mm twisted-pair copper cable. To enable this gain control, pin AGC must be shorted to pin LN. The start current for compensation corresponds to a line current of typically 23 mA and the stop current to 57 mA. The start current can be increased by connecting an external resistor between pins AGC and LN. It can be increased up to 40 mA (using a resistor typically 80 k). The start and stop current will be maintained in a ratio equal to 2.5. By leaving the AGC pin open-circuit, the gain control is disabled and no line loss compensation is performed. Handsfree application As can be seen from Fig.6, a loop is formed via the sidetone network in the line interface part and the acoustic TEA1098A coupling between loudspeaker and microphone of the handsfree part. When this loop gain is greater than 1, howling occurs. In a full duplex application this would be the case. The loop-gain has to be much lower than 1 and therefore has to be decreased to avoid howling. This is achieved by the duplex controller. The duplex controller of the TEA1098A detects which channel has the `largest' signal and then controls the gains of the microphone and loudspeaker amplifiers so that the sum of the gains remains constant. As a result, in handsfree application, the circuit can be in three stable modes: 1. Transmit mode (TX mode). The gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. 2. Receive mode (RX mode). The gain of the loudspeaker amplifier is at its maximum and the gain of the microphone amplifier is at its minimum. 3. Idle mode. The gain of the amplifiers is halfway between their maximum and minimum value. The difference between the maximum gain and minimum gain is called the switching range. handbook, full pagewidth acoustic coupling telephone line HYBRID DUPLEX CONTROL sidetone MGM299 Fig.6 Handsfree telephone set principles. 2000 Aug 18 11 Philips Semiconductors Product specification Speech and handsfree IC HANDSFREE MICROPHONE CHANNEL TEA1098A (PINS TXI, GATX, TXO AND GNDTX; SEE Fig.7) The TEA1098A has an asymmetrical handsfree microphone input (pin TXI) with an input resistance of 20 k. The DC biasing of the input is 0 V. The gain of the input stage varies according to the mode of the TEA1098A. In the transmit mode, the gain is at its maximum; in the receive mode, it is at its minimum and in the Idle mode, it is halfway between maximum and minimum. handbook, full pagewidth VBB R MIC CMIC TXI 31 V I I V 30 GATX RGATX 29 TXO to envelope detector from voice switch 32 GNDTX FCA150 Fig.7 Handsfree microphone channel. Switch-over from one mode to the other is smooth and click-free. The output TXO is biased at two diodes voltage and has a current capability equal to 20 A (RMS). In the transmit mode, the overall gain of the microphone amplifier (from pins TXI to TXO) can be adjusted from 0 dB up to 31 dB to suit specific application requirements. The gain is proportional to the value of RGATX and equals 15.2 dB with RGATX = 30.1 k. Without limitation from the output, the microphone input stage can accommodate signals up to 18 mV (RMS) at room temperature for 2% of THD. LOUDSPEAKER CHANNEL handbook, full pagewidth RGALS to logic GALS 15 VBB LSAO 16 V I to/from voice switch to envelope detector CGALS CLSAO I V 6 5 HFRX LVCI EVCI DLC 13 CDLC DYNAMIC LIMITER VOLUME CONTROL 4 FCA151 Fig.8 Loudspeaker channel. 2000 Aug 18 12 Philips Semiconductors Product specification Speech and handsfree IC Loudspeaker amplifier (pins HFRX, GALS and LSAO) The TEA1098A has an asymmetrical input for the loudspeaker amplifier with an input resistance of 20 k between pins HFRX and GND. It is biased at two diodes voltage. Without limitation from the output, the input stage can accommodate signals up to 580 mV (RMS) at room temperature for 2% of THD. The gain of the input stage varies according to the mode of the TEA1098A. In the receive mode, the gain is at its maximum; in the transmit mode, it is at its minimum and in the Idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The rail-to-rail output stage is designed to power a loudspeaker connected as a single-ended load (between pins LSAO and GND). In the receive mode, the overall gain of the loudspeaker amplifier can be adjusted from 0 dB up to 35 dB to suit specific application requirements. The gain from HFRX to LSAO is proportional to the value of RGALS and equals 28 dB with RGALS = 255 k. A capacitor connected in parallel with RGALS is recommended and provides a first-order low-pass filter. TEA1098A below 2% up to 10 dB (minimum) of input voltage overdrive [providing VHFRX is below 580 mV (RMS)]. When the supply voltage drops below an internal threshold voltage of 2.7 V, the gain of the loudspeaker amplifier is rapidly reduced (approximately 1 ms). When the supply voltage exceeds 2.7 V, the gain of the loudspeaker amplifier is increased again. By forcing a level lower than 0.2 V on pin DLC, the loudspeaker amplifier is muted and the TEA1098A is automatically forced into the transmit mode. DUPLEX CONTROLLER Signal and noise envelope detectors (pins TSEN, TENV, TNOI, RSEN, RENV and RNOI) The signal envelopes are used to monitor the signal level strength in both channels. The noise envelopes are used to monitor background noise in both channels. The signal and noise envelopes provide inputs for the decision logic. The signal and noise envelope detectors are illustrated in Fig.9. For the transmit channel, the input signal at pin TXI is 40 dB amplified to TSEN. For the receive channel, the input signal at pin HFRX is 0 dB amplified to RSEN. The signals from TSEN and RSEN are logarithmically compressed and buffered to TENV and RENV respectively. The sensitivity of the envelope detectors is set with RTSEN and RRSEN. The capacitors connected in series with the two resistors block any DC component and form a first-order high-pass filter. In the basic application (see Fig.17) it is assumed that VTXI = 1 mV (RMS) and VHFRX = 100 mV (RMS) nominal and both RTSEN and RRSEN have a value of 10 k. With the value of CTSEN and CRSEN at 100 nF, the cut-off frequency is at 160 Hz. The buffer amplifiers feeding the compressed signals to pins TENV and RENV have a maximum source current of 120 A and a maximum sink current of 1 A. Capacitors CTENV and CRENV set the timing of the signal envelope monitors. In the basic application, the value of both capacitors is 470 nF. Because of the logarithmic compression, each 6 dB signal increase means 18 mV increase of the voltage on the envelopes TENV or RENV at room temperature. Thus, timings can be expressed in dB/ms. At room temperature, the 120 A sourced current corresponds to a maximum rise-slope of the signal envelope of 85 dB/ms. This is sufficient to track normal speech signals. The 1 A current sunk by TENV or RENV corresponds to a maximum fall-slope of 0.7 dB/ms. This is sufficient for a smooth envelope and also eliminates the effect of echoes on switching behaviour. 13 Digital volume control (pins LVCI and EVCI) The loudspeaker amplifier gain can be adjusted (attenuated) with the LVCI logic input (as MSB) and the 4-level input EVCI (as LSBs). This combination provides 8 steps of -3.85 dB which apply in all handsfree receive modes. Maximum gain (27 dB) is obtained for LVCI = VDD and EVCI = VDD; minimum gain (0 dB) is defined by LVCI = 0 and EVCI = 0. In-between steps correspond to the combination of LVCI with EVCI intermediary levels of 1 V 2 3 DD and 3VDD (see Fig.17). E.g. the first attenuation step is given by LVCI = VDD and EVCI = 23VDD. Dynamic limiter (pin DLC) The dynamic limiter of the TEA1098A prevents clipping of the loudspeaker output stage and protects the operation of the circuit when the supply voltage at VBB falls below 2.7 V. Hard clipping of the loudspeaker output stage is prevented by rapidly reducing the gain when the output stage starts to saturate. The time in which gain reduction is effected (clipping attack time) is approximately a few milliseconds. The circuit stays in the reduced gain mode until the peaks of the loudspeaker signals no longer cause saturation. The gain of the loudspeaker amplifier then returns to its normal value within the clipping release time (typically 250 ms). Both attack and release times are proportional to the value of the capacitor CDLC. The total harmonic distortion of the loudspeaker output stage, in reduced gain mode, stays 2000 Aug 18 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A handbook, full pagewidth DUPLEX CONTROLLER to logic LOG from microphone amplifier from loudspeaker amplifier LOG to logic 9 TSEN RTSEN CTSEN 8 TENV 7 TNOI 11 RSEN RRSEN 12 RENV 10 RNOI CTENV CTNOI CRSEN CRENV CRNOI FCA152 Fig.9 Signal and noise envelope detectors. handbook, full pagewidth 4 mV (RMS) 1 mV (RMS) MBG354 INPUT SIGNAL SIGNAL ENVELOPE A A: 85 dB/ms B: 0.7 dB/ms 36 mV B A B NOISE ENVELOPE C B: 0.7 dB/ms C: 0.07 dB/ms 36 mV B C B time Fig.10 Signal and noise envelope waveforms. To determine the noise level, the signals on pins TENV and RENV are buffered to pins TNOI and RNOI. These buffers have a maximum source current of 1 A and a maximum sink current of 120 A. Capacitors CTNOI and CRNOI set the timing. In the basic application, see Fig.17, the value of both capacitors is 4.7 F. At room temperature, the 1 A sourced current corresponds to a maximum rise-slope of the noise envelope of approximately 0.07 dB/ms. 2000 Aug 18 14 This is small enough to track background noise and not to be influenced by speech bursts. The 120 A current that is sunk corresponds to a maximum fall-slope of approximately 8.5 dB/ms. However, during the decrease of the signal envelope, the noise envelope tracks the signal envelope so it will never fall faster than approximately 0.7 dB/ms. The behaviour of the signal envelope and noise envelope monitors is illustrated in Fig.10. Philips Semiconductors Product specification Speech and handsfree IC Decision logic (pins IDT and SWT) TEA1098A handbook, full pagewidth 28 IDT DUPLEX CONTROLLER Vref TENV 8 TNOI 7 13 mV ATTENUATOR LOGIC(1) RIDT 27 SWT CSWT X X 1 X X 0 1 0 0 1 0 1 X X 0 X -10 A +10 A +10 A 0 0 RENV 12 RNOI 10 13 mV X 1 X 0 Vdt from logic from dynamic limiter FCA153 (1) When DLC < 0.2 V, -10 A is forced. Fig.11 Decision logic. The TEA1098A selects its mode of operation (transmit, receive or Idle mode) by comparing the signal and the noise envelopes of both channels. This is executed by the decision logic. The resulting voltage on pin SWT is the input for the voice switch. To facilitate the distinction between signal and noise, the signal is considered as speech when its envelope is more than 4.3 dB above the noise envelope. At room temperature, this is equal to a voltage difference VENV - VNOI = 13 mV. This so-called speech/noise threshold is implemented in both channels. The signal on pin TXI contains both speech and the signal from the loudspeaker (acoustic coupling). When receiving, the contribution from the loudspeaker overrules the speech. 2000 Aug 18 15 As a result, the signal envelope on pin TENV is formed mainly by the loudspeaker signal. To correct this, an attenuator is connected between pin TENV and the TENV/RENV comparator. Its attenuation equals that applied to the microphone amplifier. When a dial tone is present on the line, without monitoring, the tone would be recognized as noise because it is a signal with a constant amplitude. This would cause the TEA1098A to go into the Idle mode and the user of the set would hear the dial tone fade away. To prevent this, a dial tone detector is incorporated which, in standard applications, does not consider input signals between HFRX and GND as noise when they have a level greater than 25 mV (RMS). This level is proportional to RRSEN. Philips Semiconductors Product specification Speech and handsfree IC In the same way, a transmit detector is integrated which, in standard applications, does not consider input signals between pins TXI and GNDTX as noise when they have a level greater than 0.75 mV (RMS). This level is proportional to RTSEN. As can be seen from Fig.11, the output of the decision logic is a current source. The logic table gives the relationship between the inputs and the value of the current source. It can charge or discharge the capacitor CSWT with a current of 10 A (switch-over). If the current is zero, the voltage on pin SWT becomes equal to the voltage on pin IDT via the high-ohmic resistor RIDT (idling). The resulting voltage difference between pins SWT and IDT determines the mode of the TEA1098A and can vary between -400 and +400 mV (see Table 1). Table 1 Modes of TEA1098A VSWT - VIDT (mV) <-180 0 >180 Idle mode receive mode MODE transmit mode TEA1098A In the transmit mode, the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. In the receive mode, the opposite applies. In the Idle mode, both microphone and loudspeaker amplifier gains are halfway. The difference between maximum and minimum is the so called switching range. This range is determined by the ratio of RSWR and RSTAB and is adjustable between 0 and 52 dB. RSTAB should be 3.65 k and sets an internally used reference current. In the basic application diagram given in Fig.17, RSWR is 365 k which results in a switching range of 40 dB. The switch-over behaviour is illustrated in Fig.13. In the receive mode, the gain of the loudspeaker amplifier can be reduced using the volume control. Since the voice switch keeps the sum of the gains constant, the gain of the microphone amplifier is increased at the same time (see dashed curves in Fig.13). In the transmit mode, however, the volume control has no influence on the gain of the microphone amplifier or the gain of the loudspeaker amplifier. Consequently, the switching range is reduced when the volume is reduced. At maximum reduction of volume, the switching range becomes 0 dB. The switch-over timing can be set with CSWT, the Idle mode timing with CSWT and RIDT. In the basic application given in Fig.17, CSWT is 220 nF and RIDT is 2.2 M. This enables a switch-over time from transmit to receive mode or vice-versa of approximately 13 ms (580 mV swing on pin SWT). The switch-over time from Idle mode to transmit mode or receive mode is approximately 4 ms (180 mV swing on pin SWT). The switch-over time, from receive mode or transmit mode to Idle mode is equal to 4 x RIDTCSWT and is approximately 2 seconds (Idle mode time). The input at pin DLC overrules the decision logic. When the voltage on pin DLC goes lower than 0.2 V, the capacitor CSWT is discharged with 10 A thus resulting in the transmit mode. DUPLEX CONTROLLER to microphone amplifier from SWT Gvtx + Gvrx = C(1) VOICE SWITCH 25 26 STAB SWR RSTAB RSWR from volume control to loudspeaker amplifier FCA154 Voice switch (pins STAB and SWR) A diagram of the voice switch is illustrated in Fig.12. With the voltage on pin SWT, the TEA1098A voice switch regulates the gains of the transmit and the receive channels so that the sum of both is kept constant. (1) C = constant. Fig.12 Voice switch. 2000 Aug 18 16 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A handbook, full pagewidth Idle mode Tx mode G vtx, G vrx (10 dB/div) FCA155 Rx mode G vtx +24 dB +16 dB +8 dB Gvtx(min) Gvrx(max) -8 dB -16 dB -24 dB G vrx -400 -200 0 +200 +400 VSWT - VIDT (mV) Fig.13 Switch-over behaviour. Logic inputs The actions of the logic inputs BPC and MUTE, combined with the HFC input are detailed in Table 2. Table 2 Table of switch management LOGIC INPUTS FEATURES HFC 0 0 0 0 1 1 1 1 MUTE 0 0 1 1 0 0 1 1 BPC 0 1 0 1 0 1 0 1 DTMF to RECO; RECO to EARO; MICS is active DTMF to LN; DTMF to RECO; RECO to EARO; MICS is active IR to RECO; RECO to EARO; MICS is active MIC to LN; IR to RECO; RECO to EARO; MICS is active DTMF to RECO; HFRX to LSAO; MICS is active DTMF to LN; DTMF to RECO; HFRX to LSAO; MICS is active IR to RECO; HFRX to LSAO; MICS is active TXI to TXO; HFTX to LN; IR to RECO; HFRX to LSAO; MICS is active handset beep mode handset dialling mode handset secret mode handset conversation mode handsfree beep mode handsfree dialling mode handsfree secret mode handsfree conversation mode APPLICATION 2000 Aug 18 17 Philips Semiconductors Product specification Speech and handsfree IC LIMITING VALUES SYMBOL VLN PARAMETER positive continuous line voltage repetitive line voltage during switch-on or line interruption Vn(max) Iline Ptot maximum voltage on pins REG, SLPE, IR and AGC maximum voltage on all other pins except VDD maximum line current total power dissipation TEA1098ATV TEA1098AUH Tstg Tamb storage temperature ambient temperature Tamb = 75 C see Fig.14 see Fig.15 - - -40 -25 CONDITIONS MIN. -0.4 -0.4 -0.4 -0.4 - TEA1098A MAX. +12 +13.2 V V UNIT VLN + 0.4 V VBB + 0.4 V 130 400 720 +125 +75 mA mW mW C C THERMAL CHARACTERISTICS SYMBOL Rth(j-a) TEA1098ATV TEA1098AUH Note 1. The value is to be determined by the customer in the application. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air 117 note 1 K/W - VALUE UNIT 2000 Aug 18 18 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A handbook, full pagewidth 160 FCA177 Iline (mA) 120 (1) (2) (3) 80 (4) (5) (6) 40 0 2 4 6 8 10 VSLPE (V) 12 LINE (1) (2) (3) (4) (5) (6) Tamb (C) 25 35 45 55 65 75 Ptot (mW) 790 710 630 550 470 390 Fig.14 Safe operating area (TEA1098ATV). 2000 Aug 18 19 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A handbook, full pagewidth 160 FCA079 Iline (mA) (1) 120 (2) (3) 80 (4) (5) (6) (7) 40 0 2 4 6 8 10 VSLPE (V) 12 LINE (1) (2) (3) (4) (5) (6) (7) Ptot (mW) 40 50 60 75 90 105 130 Fig.15 Safe operating area (TEA1098AUH). 2000 Aug 18 20 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A CHARACTERISTICS Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 C for TEA1098ATV; Tj = 25 C for TEA1098AUH; AGC pin connected to LN; PD = HIGH; HFC = LOW; MUTE = HIGH; BPC = HIGH; all DC levels are referenced to GND; unless otherwise specified. SYMBOL Supplies LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB) VSLPE stabilized voltage between SLPE and GND Iline = 15 mA Iline = 70 mA 3.4 5.7 - 3.7 6.1 4.5 4 6.5 - V V V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VREF RVA = 40 k stabilized voltage with an external resistor RVA between REG and SLPE stabilized voltage Tamb = -25 to +75 C variation with temperature referenced to 25 C line voltage Iline = 1 mA Iline = 4 mA Iline = 15 mA Iline = 130 mA VREF(T) - 60 - mV VLN - - 3.7 - 2.75 4.9 - - - 1.55 2.35 4.0 8.7 3.0 5.3 18 45 30 - - 4.3 9.3 3.25 5.7 - - - V V V V V V mA mA mV VBB regulated supply voltage for internal circuitry line current for voltage increase Iline = 15 mA; IBB = 0 Iline = 70 mA; IBB = 0 start current stop current Iline VBB(T) regulated voltage Tamb = -25 to +75 C variation with temperature referenced to 25 C current available on pin VBB in speech mode in handsfree mode IBB - - 3.1 - - 11 9 - - 3.6 - mA mA SUPPLY FOR PERIPHERALS (PIN VDD) VDD VDD(T) supply output voltage VBB > 3.35 V + 0.25 V (typ.) otherwise regulated voltage Tamb = -25 to +75 C; variation with VBB > 3.35 V + 0.25 V (typ.) temperature referenced to 25 C current consumption on in trickle mode; Iline = 0 mA; VDD VDD = 1.5 V; VBB discharging current sunk from external source in ringer mode; Iline = 0; VDD = 3.35 V 3.35 30 V V mV VBB - 0.25 - IDD - 15 150 nA IDD(ext) - - 75 mA 2000 Aug 18 21 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL IDD(O) PARAMETER current available for peripherals CONDITIONS VDD = 3.3 V - MIN. -3 TYP. - MAX. UNIT mA SUPPLY FOR MICROPHONE (PIN MICS) VMICS supply voltage for a microphone - 2.0 - V POWER-DOWN INPUT (PIN PD) VIL Ii(PD)(l) VIH IBB(PD) LOW-level input voltage input current at low voltage HIGH-level input voltage current consumption on PD = LOW VBB during power-down phase -0.4 - 1.4 - - -3 - 460 +0.3 -6 VBB + 0.3 - V A V A Preamplifier inputs (pins MIC+, MIC-, IR, DTMF, TXI, HFTX and HFRX) Zi(MIC) input impedance differential between pins MIC+ and MIC- single-ended between pins MIC+/MIC- and GNDTX Zi(IR) input impedance between pins IR and LN input impedance between pins DTMF and GND input impedance between pins TXI and GNDTX input impedance between pins HFTX and GND input impedance between pins HFRX and GND - - 70 35 - - k k - 20 - k Zi(DTMF) - 20 - k Zi(TXI) - 20 - k Zi(HFTX) - 20 - k Zi(HFRX) - 20 - k TX amplifiers TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC- AND LN) Gv(MIC-LN) Gv(f) voltage gain from pin MIC+/MIC- to LN VMIC = 5 mV (RMS) 43.3 - 44.3 0.25 45.3 - dB dB gain variation with f = 300 to 3400 Hz frequency referenced to 1 kHz 2000 Aug 18 22 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL Gv(T) PARAMETER CONDITIONS - MIN. TYP. 0.25 - MAX. UNIT dB gain variation with Tamb = -25 to +75 C temperature referenced to 25 C common mode rejection ratio total harmonic distortion at LN noise output voltage at pin LN; pins MIC+/MIC- shorted through 200 gain reduction when muted VLN = 1.4 V (RMS) Iline = 4 mA; VLN = 0.12 V (RMS) psophometrically weighted (p53 curve) CMRR THD - - - - 80 - - -77 - 2 10 - dB % % dBmp Vno(LN) Gv(mute) Gv(MIC)(mute) MUTE = 0; see Table 2 60 60 80 - - - dB dB gain reduction in VMIC = 10 mV (RMS); microphone mute mode MUTE = 1; BPC = 0; see Table 2 DTMF AMPLIFIER (PINS DTMF, LN AND RECO) Gv(DTMF-LN) Gv(f) voltage gain from pin DTMF to LN VDTMF = 50 mV (RMS) 24.35 - 25.35 0.25 26.35 - dB dB gain variation with f = 300 to 3400 Hz frequency referenced to 1 kHz gain variation with Tamb = -25 to +75 C temperature referenced to 25 C gain reduction if not active voltage gain from pin DTMF to RECO in handsfree mode voltage gain from pin DTMF to RECO in handset mode digital volume control adjustment range in handset mode digital volume control adjustment step in handset mode MUTE = 1; see Table 2 VDTMF = 50 mV (RMS); MUTE = 0; HFC = 1 VDTMF = 50 mV (RMS); MUTE = 0; HFC = 0; EVCI = 0 VDTMF = 50 mV (RMS); MUTE = 0; HFC = 0 MUTE = 0; HFC = 0; per step Gv(T) - 0.25 - dB Gv(mute) Gv(DTMF-RECO) 60 - 80 -17 - - dB dB Gv(DTMF-RECO) - -28.2 - dB Gv(DTMF-RECO) - -12.75 - dB Gv(DTMF-RECO) - 4.25 - dB 2000 Aug 18 23 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT TX AMPLIFIER USING HFTX (PINS HFTX AND LN) Gv(HFTX-LN) Gv(f) voltage gain from pin HFTX to LN VHFTX = 15 mV (RMS) 33.5 - 34.7 0.25 35.9 - dB dB gain variation with f = 300 to 3400 Hz frequency referenced to 1 kHz gain variation with Tamb = -25 to +75C temperature referenced to 25 C total harmonic distortion at LN maximum input voltage at HFTX (RMS value) VLN = 1.4 V (RMS) Iline = 70 mA; THD = 2% Gv(T) - 0.35 - dB THD VHFTX(rms) Vno(LN) - - - - 85 -77 2 - - % mV dBmp noise output voltage at psophometrically weighted pin LN; pin HFTX (p53 curve) shorted to GND through 200 in series with 10 F gain reduction when muted MUTE = 0; see Table 2 Gv(m) Gv(MIC)(mute) RX amplifiers 60 60 80 - - - dB dB gain reduction in MUTE = 1; BPC = 0; microphone mute mode see Table 2 RX AMPLIFIERS USING IR (PINS IR AND RECO) Gv(IR-RECO)(HF) voltage gain from IR to RECO (handsfree mode) voltage gain from IR to RECO (handset mode) digital volume control adjustment range in handset mode digital volume control adjustment step in handset mode gain variation with frequency referred to 1 kHz VIR = 4 mV (RMS); HFC = 1 28.4 29.4 30.4 dB Gv(IR-RECO)(HS) Gv(IR-RECO) VIR = 4 mV (RMS); HFC = 0; 16.2 EVCI = 0 VIR = 4 mV (RMS); HFC = 0; 13 EVCI = VDD HFC = 0; per step - 17.2 14.5 18.2 16 dB dB Gv(IR-RECO) +4.85 - dB Gv(f) f = 300 to 3400 Hz - 0.25 - dB Gv(T) gain variation with Tamb = -25 to +75 C temperature referenced to 25 C maximum input voltage on IR (referenced to LN) (RMS value) Iline = 70 mA; THD = 2% - 0.3 - dB VIR(max)(rms) - 50 - mV 2000 Aug 18 24 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL VRECO(max)(rms) PARAMETER maximum output voltage on RECO (RMS value) noise output voltage at pin RECO; pin IR is an open-circuit (RMS value) gain reduction if not active CONDITIONS THD = 2%; Gv(RECO-EARO) = 12 dB psophometrically weighted (p53 curve) MIN. 0.75 TYP. 0.9 - MAX. UNIT V Vno(RECO)(rms) - -84 - dBVp Gv(mute) MUTE = 0; see Table 2 60 80 - dB RX EARPIECE AMPLIFIER (PINS GARX AND EARO) Gv(RECO-EARO) gain voltage range between pins RECO and EARO maximum output voltage on EARO (RMS value) noise output voltage at pin EARO; pin IR is an open-circuit (RMS value) 0 - 20 dB VEARO(max)(rms) sine wave drive; RL = 150 ; 0.75 THD < 2% Gv(EARO) = 12 dB; EVCI = 0; psophometrically weighted (p53 curve) - 0.9 - V Vno(EARO)(rms) -84 - dBVp Automatic Gain Control (pin AGC) Gv(trx) gain control range for transmit and receive signals affected by the AGC; with respect to Iline = 15 mA highest line current for maximum gain lowest line current for maximum gain Istart adjustment range with RAGC LOW-level input voltage HIGH-level input voltage input current at low voltage for pin HFC for pin MUTE for pin BPC VBB = 3.0 V - - - 0 -5 -2.5 - - - A A A Iline = 70 mA; Gv(MIC-LN); Gv(IR-RECO); RAGC = 0; Iline = 70 mA for Gv(HFTX-LN); RAGC = 0 5.45 5.8 6.45 6.8 7.45 7.8 dB dB Istart Istop Istart - - - 23 57 - - - 40 mA mA mA Logic inputs (pins HFC, MUTE, and BPC) VIL VIH Ii(l) -0.4 1.4 - - +0.3 VBB + 0.3 V V 2000 Aug 18 25 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL Ii(h) PARAMETER input current at high voltage for pin HFC for pin MUTE for pin BPC CONDITIONS VBB = 3.0 V - - - MIN. TYP. MAX. UNIT 2.5 0 0 - - - A A A Handsfree mode (HFC = HIGH) HF MICROPHONE AMPLIFIER (PINS TXI, TXO AND GATX) Gv(TXI-TXO) Gv Gv(f) voltage gain from pin TXI to TXO voltage gain adjustment with RGATX gain variation with f = 300 to 3400 Hz frequency referenced to 1 kHz gain variation with Tamb = -25 to +75 C temperature referenced to 25 C noise output voltage at pin TXO; pin TXI is shorted through 200 and 10 F to GNDTX gain reduction when muted psophometrically weighted (p53 curve); Gv(TXI) = 15 dB; RMS value MUTE = 0; see Table 2 VTXI = 3 mV (RMS); RGATX = 30.1 k 12.7 -15 - 15.2 - 0.1 17.7 +16 - dB dB dB Gv(T) - 0.15 - dB Vno(TXO)(rms) - -101 - dBVp Gv(mute) Gv(SEC) 60 60 80 - - - dB dB gain reduction in secret Vtxi = 10 mV (RMS); mode MUTE = 1; BPC = 0; see Table 2 HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND DLC) Gv(HFRX-LSAO) nominal voltage gain from pin HFRX to LSAO digital volume control adjustment range digital volume adjustment step voltage gain adjustment with RGALS gain variation with f = 300 to 3400 Hz frequency referenced to 1 kHz gain variation with Tamb = -25 to +75 C temperature referenced to 25 C maximum input voltage at pin HFRX (RMS value) Iline = 70 mA; RGALS = 33 k; for 2% THD in the input stage 26 VHFRX = 30 mV (RMS); RGALS = 255 k; LVCI = VDD; EVCI = VDD VHFRX = 30 mV (RMS); RGALS = 255 k per step 24.5 27 29.5 dB Gv(HFRX-LSAO) Gv(step) Gv Gv(f) 25.5 - -28 - 27 3.85 - 0.3 28.5 - +7 - dB dB dB dB Gv(T) - 0.3 - dB VHFRX(max)(rms) - 580 - mV 2000 Aug 18 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL Vno(LSAO)(rms) PARAMETER noise output voltage at pin LSAO; pin HFRX is open-circuit (RMS value) gain reduction if not active CONDITIONS psophometrically weighted (p53 curve); LVCI = VDD; EVCI = VDD see Table 2 - MIN. TYP. -79 - MAX. UNIT dBVp Gv(mute) VLSAO(rms) 60 - - - - 150 - - 0.9 1.3 1.6 300 - - - - - - dB output voltage IBB = 1 mA; IDD = 1 mA capability (RMS value) Iline = 18 mA at pin LSAO with sine Iline = 30 mA wave signal and loaded Iline > 50 mA with 50 + 220 F; GvLSAO = 28 dB maximum output current at pin LSAO (peak value) V V V mA ILSAO(max) DYNAMIC LIMITER (PINS LSAO AND DLC) tatt attack time when VHFRX jumps up from 20 mV to 20 mV +10 dB when VBB drops below VBB(th) trel release time when VHFRX jumps down from 20 mV +10 dB to 20 mV VHFRX = 20 mV + 10 dB; Gv(LSAO) = 28 dB; t > tatt - - - - 1 100 5 - - ms ms ms THD VBB(th) VDLC(th) total harmonic distortion VBB limiter threshold threshold voltage required on pin DLC to obtain mute receive condition Start-up current sourced by pin DLC voltage gain reduction in mute receive condition - - - 1 2.7 - 2 - 0.2 % V MUTE RECEIVE (PIN DLC) V IDLC(th) Gvrx(m) VDLC = 0.2 V VDLC = 0.2 V - 60 100 80 - - A dB TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI) Preamplifiers Gv(TSEN) Gv(RSEN) voltage gain from pin TXI to TSEN voltage gain from pin HFRX to RSEN - - 40 0 - - dB dB 2000 Aug 18 27 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL Vdet(TSEN) PARAMETER CONDITIONS ITSEN = 0.8 to 160 A - MIN. TYP. - MAX. UNIT Logarithmic compressor and sensitivity adjustment sensitivity detection on pin TSEN; voltage change on pin TENV when doubling the current from TSEN sensitivity detection on pin RSEN; voltage change on pin RENV when doubling the current from RSEN 18 mV Vdet(RSEN) IRSEN = 0.8 to 160 A - 18 - mV Signal envelope detectors Isource(ENV) maximum current sourced from pin TENV or RENV maximum current sunk by pin TENV or RENV voltage difference between RENV and TENV 10 A sourced from both RSEN and TSEN; signal detectors tracking; note 1 - 120 - A Isink(ENV) VENV -1.25 - -1 3 -0.75 - A mV Noise envelope detectors Isource(NOI) maximum current sourced from pin TNOI or RNOI maximum current sunk by pin TNOI or RNOI voltage difference between pins RNOI and TNOI 5 A sourced from both RSEN and TSEN; noise detectors tracking; note 1 0.75 1 1.25 A Isink(NOI) VNOI - - -120 3 - - A mV DIAL TONE DETECTOR VHFRX(th)(rms) TX LEVEL LIMITER VTXI(th)(rms) threshold level at pin TXI (RMS value) RTSEN = 10 k - 0.75 - mV threshold level at pin HFRX (RMS value) RRSEN = 10 k; CRSEN = 100 nF - 25 - mV DECISION LOGIC (PINS IDT AND SWT) Signal recognition VStrx(th) threshold voltage VHFRX < VHFRX(th); between RENV/RNOI VTXI < VTXI(th); note 2 or between TENV/TNOI to switch-over from Idle mode to RX/TX mode - 13 - mV 2000 Aug 18 28 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT A Switch-over Isource(SWT) current sourced from pin SWT when switching to receive mode current sunk by pin SWT when switching to transmit mode current sourced from pin SWT in Idle mode 7.5 10 12.5 Isink(SWT) -12.5 -10 -7.5 A Iidle(SWT) - 0 - A VOICE SWITCH (PINS STAB AND SWR) SWR SWR |Gv| switching range switching range adjustment voltage gain variation from active modes to Idle mode gain tracking (Gvtx + Gvrx) during switching, referred to Idle mode with RSWR referenced to 365 k SWRA = 40 dB - -40 - 40 - 20 - +12 - dB dB dB Gtr - 0.5 - dB Notes 1. Corresponds to 1 dB tracking. 2. Corresponds to 4.3 dB noise/speech recognition level. 2000 Aug 18 29 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... ndbook, full pagewidth 2000 Aug 18 30 TEST AND APPLICATION INFORMATION Philips Semiconductors Speech and handsfree IC i = 15 mA J Iline Dz Vd = 10 V Cemc 10 nF Zimp 620 Eir v = sin RSLPE 20 CREG 4.7 F CVBB 470 F AGC 22 LN 19 14 VBB 23 CVDD 47 F VDD 4 EVCI LVCI BPC PD HFC MUTE EARO CGAR 100 pF Re2 100 k RQR SLPE 18 100 F Cimp CIR 100 nF CMICS MICS 4.7 F MIC+ RMIC 200 MIC- 34 24 IR 21 20 REG 5 3 1 40 2 36 VMIC 33 37 GARX Re1 100 k 150 CQR 4.7 F CHFTX 100 nF HFTX 39 CGARS 1 nF Crxe 100 nF CHFRX 100 nF VHFRX TXO RGATX 30.1 k GATX CTXIN VHFTX 100 nF CDTMF VTXI 100 nF DTMF 29 TEA1098A 38 RECO 30 6 HFRX TXI 15 31 GALS RGALS 255 k CGALS 150 pF 35 16 11 LSAO RSEN RENV RNOI IDT RIDT 2.2 M CRNOI 4.7 F RRSEN 10 k CRENV 470 nF CLSAO 220 F RLSAO 50 TSEN VDTMF 9 12 8 7 17 32 25 26 13 27 10 28 TENV TNOI RTSEN 10 k CTSEN 100 nF CTENV 470 nF GND CTNOI 4.7 F GNDTX STAB RSTAB 3.65 k SWR RSWR 365 k DLC CDLC 470 nF SWT CSWT 220 nF Product specification CRSEN 100 nF FCA145 TEA1098A Fig.16 Test configuration. This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... ndbook, full pagewidth 2000 Aug 18 D2 D3 Dz Vd = 10 V Cemc 10 nF Zimp 620 Cimp 22 F MICS RMICP 1 k Ctx2 handset micro CMICH 33 nF 22 nF Ctx1 22 nF B RMICM 1 k from MICS RBMICS 2 k handsfree micro A Philips Semiconductors Speech and handsfree IC Rbal2 820 Rbal1 130 Rast2 3.92 k Cbal 220 nF RSLPE 20 Rast3 392 CIR 100 nF IR SLPE 18 21 20 RVCIL LV0 360 k CREG 4.7 F CVBB 470 F AGC 22 LN 19 VBB 14 23 CVDD 47 F VDD 4 EVCI 5 RVCIH LV1 180 k LV2 LVCI 3 1 40 BPC PD HFC HFC MUTE EARO CGAR 100 pF Re1 100 k RECO HFRX GALS RGALS 255 k LSAO RSEN RENV RNOI IDT RIDT 2.2 M CRNOI 4.7 F CRENV 470 nF FCA146 REG from microcontroller BPC PD Rast1 130 k MICS CMICS 4.7 F MIC+ Rtx3 8.2 k 24 2 36 MUTE CQR 10 F Re2 100 k CGARS 1 nF Rtx2 15 k Rtx1 15 k CHFTX 100 nF RGATX 30.1 k 34 GARX 37 MIC- 33 HFTX TXO 39 TEA1098A 29 Crxe 100 nF CHFRX 100 nF 31 D1 D4 38 6 GATX TXI CTXIN CDTMF 100 nF 30 31 15 CMICB 100 nF 33 nF CGALS 150 pF CLSAO 220 F DTMF 16 35 11 TSEN TENV TNOI RTSEN 10 k CTSEN 100 nF CTENV 470 nF 9 8 7 17 GND 32 GNDTX 25 STAB RSTAB 3.65 k 26 SWR RSWR 365 k 13 DLC CDLC 470 nF 27 12 10 28 SWT RRSEN 10 k CRSEN 100 nF CTNOI 4.7 F CSWT 220 nF Product specification TEA1098A Fig.17 Basic application diagram. Philips Semiconductors Product specification Speech and handsfree IC BONDING PAD LOCATIONS FOR TEA1098AUH COORDINATES SYMBOL HFRX TNOI TENV TSEN TNOI RSEN RENV DLC VBB GALS LSAO n.c. GND SLPE SLPE LN REG IR AGC VDD MICS STAB SWR n.c. PAD x 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 137.5 137.5 137.5 137.5 137.5 137.5 137.5 137.5 137.5 137.5 185.2 401.2 861.5 1125 1348.2 1537.5 1704.8 1888.8 2084 2251 2503.8 2703.8 2897 2944.8 y 3139.2 2944 2605.8 2375.5 2164.5 1945.2 1721.8 1494.5 1050.2 616.8 128 128 128 128 128 128 128 128 128 128.2 127 128.5 128 343 SWT IDT TXO GATX TXI GNDTX GNDTX MIC- MIC+ DTMF EARO GARX RECO HFTX HFC PD MUTE BPC EVCI LVCI 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 SYMBOL PAD x TEA1098A COORDINATES y 570 784 973.8 1182 1390 1581 1747.8 1917.2 2129 2931 3136.8 3171.2 3171.2 3171.2 3171.2 3171.2 3171.2 3171.2 3171.2 3171.2 2944.8 2945 2945 2945 2945 2945 2945 2945 2945 2945 2940 2651 2451.8 2170.8 1934.2 1678.8 1425 1177 942.2 738.5 All x/y coordinates represent the position of the centre of the pad (in m) with respect to the origin (x/y = 0/0) of the die (see Fig.18). The size of all pads is 80 m2. 2000 Aug 18 32 Philips Semiconductors Product specification Speech and handsfree IC TEA1098A 44 1 2 3 4 5 6 7 8 R8911R 43 42 41 40 39 38 37 36 35 34 Die Identifier 33 32 31 30 29 28 TEA1098AUH 9 27 26 10 25 24 23 0 x y 0 11 12 13 14 15 16 17 18 19 20 21 22 FCA182 Fig.18 TEA1098AUH bonding pad locations. 2000 Aug 18 33 Philips Semiconductors Product specification Speech and handsfree IC PACKAGE OUTLINE VSO40: plastic very small outline package; 40 leads TEA1098A SOT158-1 D E A X c y HE vMA Z 40 21 Q A2 A1 pin 1 index Lp L 1 e bp 20 wM detail X (A 3) A 0 5 scale 10 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Notes 1. Plastic or metal protrusions of 0.4 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT158-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A max. 2.70 0.11 A1 0.3 0.1 A2 2.45 2.25 A3 0.25 bp 0.42 0.30 c 0.22 0.14 D (1) 15.6 15.2 E (2) 7.6 7.5 0.30 0.29 e 0.762 0.03 HE 12.3 11.8 0.48 0.46 L 2.25 Lp 1.7 1.5 Q 1.15 1.05 v 0.2 w 0.1 y 0.1 Z (1) 0.6 0.3 0.012 0.096 0.017 0.0087 0.61 0.010 0.004 0.089 0.012 0.0055 0.60 0.067 0.089 0.059 0.045 0.024 0.008 0.004 0.004 0.041 0.012 7 0o o ISSUE DATE 92-11-17 95-01-24 2000 Aug 18 34 Philips Semiconductors Product specification Speech and handsfree IC SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: TEA1098A * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. 2000 Aug 18 35 Philips Semiconductors Product specification Speech and handsfree IC Suitability of surface mount IC packages for wave and reflow soldering methods TEA1098A SOLDERING METHOD PACKAGE WAVE BGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable REFLOW(1) suitable suitable suitable suitable suitable 2000 Aug 18 36 Philips Semiconductors Product specification Speech and handsfree IC DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) TEA1098A This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. BARE DIE DISCLAIMER All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. 2000 Aug 18 37 Philips Semiconductors Product specification Speech and handsfree IC NOTES TEA1098A 2000 Aug 18 38 Philips Semiconductors Product specification Speech and handsfree IC NOTES TEA1098A 2000 Aug 18 39 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000 Internet: http://www.semiconductors.philips.com SCA 70 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 403502/03/pp40 Date of release: 2000 Aug 18 Document order number: 9397 750 07257 |
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